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IRGP4050PBF pdp switch e c g n-channel
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1 www.irf.com pd-95743 features
key parameters optimized for pdp sustain & energy recovery applications 104a continuous collector current rating reduces component count high pulse current rating makes it ideal for capacitive load circuits low temperature co-efficient of v ce (on) ensures reduced power dissipation at operating junction temperatures reverse voltage avalanche rating improves the robustness in sustain driver application short fall & rise times for fast switching lead-free this igbt is specifically designed for sustain & energy recovery applicationin plasma display panels. this igbt features low v ce (on) and fast switching times to improve circuit efficiency and reliability. low temperature co-efficientof v ce (on) makes this igbt an ideal device for pdp sustain driver application. to-247ac *package limited to 60a. absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 250 v i c @ t c = 25c continuous collector current 104* a i c @ t c = 100c continuous collector current 56 i cm pulse collector current 208 i lm clamped inductive load current 290 v ge gate-to-emitter voltage 20 v e arv reverse voltage avalanche energy 1240 mj p d @ t c = 25c maximum power dissipation 330 w p d @ t c = 100c maximum power dissipation 130 t j operating junction and -55 to +150 t stg storage temperature range c solder temperature range, for 10 sec. 300 (0.063 in. (1.6mm) from case) thermal / mechanical characteristics parameter min. typ. max. units r jc junction-to-case- igbt CCC CCC 0.38 c/w r cs case-to-sink, flat, greased surface CCC 0.24 CCC r ja junction-to-ambient, typical socket mount CCC CCC 40 wt weight CCC 6 (0.21) CCC g (oz.) downloaded from: http:///
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electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 250 v v ge = 0v, i c = 250a v (br)ecs emitter-to-collector breakdown voltage 18 v v ge = 0v, i c = 1.0a ? v (br)ces / ? t j temperature coeff. of breakdown voltage 8.2mv/c v ge = 0v, i c = 1ma 1.641.90 i c = 30a v ce(on) collector-to-emitter saturation voltage 2.04 v i c = 56a v ge = 15v 2.60 i c = 104a, t j = 150c see fig. 2, 5 v ge(th) gate threshold voltage 3.0 6.0 v ce = v ge , i c = 250a ? v ge(th) / ? t j threshold voltage temp. coefficient -11 mv/c v ce = v ge , i c = 0.25ma gfe forward transconductance 34 51 s v ce = 100v, i c = 56a i ces zero gate voltage collector current 250 v ge = 0v, v ce = 250v 2.0a v ge = 0v, v ce = 10v 5000 v ge = 0v, v ce = 250v, t j = 150c i ges gate-to-emitter leakage current 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions q g total gate charge (turn-on) 230 350 i c = 56a q ge gate-to-emitter charge (turn-on) 37 56 nc v cc = 200v see fig. 8 q gc gate-to-collector charge (turn-on) 78 120 v ge = 15v t d(on) turn-on delay time 37 t j = 25c t r rise time 35 ns i c = 30a, v cc = 180v t d(off) turn-off delay time 120 180 v ge = 15v, r g = 5.0 ? t f fall time 59 89 energy losses include "tail" e on turn-on switching loss 45 see fig. 9, 10, 14 e off turn-off switching loss 125 j e ts total switching loss 170 t d(on) turn-on delay time 35 t j = 150c t r rise time 35 ns i c = 30a, v cc = 180v t d(off) turn-off delay time 130 v ge = 15v, r g = 5.0 ? t f fall time 120 energy losses include "tail" e ts total switching loss 280 j see fig. 11, 14 l e internal emitter inductance 13 nh measured 5mm from package c ies input capacitance 4650 v ge = 0v c oes output capacitance 480 pf v cc = 30v, see fig. 7 c res reverse transfer capacitance 92 f = 1.0mhz downloaded from: http:///
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0.1 1 10 100 v ce , collecto-to-emitter voltage (v) 0.1 1 10 100 1000 i c , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) v ge = 15v 20s pulse width t j = 25c t j = 150c 0246810121416 v ge, gate-to-emitter voltage (v) 0.01 0.1 1 10 100 1000 i c , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 150c t j = 25c v cc = 50v 20s pulse width 0.1 1 10 100 f , frequency ( khz ) 0 20 40 60 80 100 120 140 l o a d c u r r e n t ( a ) for both: duty cycle : 50% tj = 125c tsink = 90c gate drive as specified power dissipation = 73w triangular wave: clamp voltage: 80% of rated 60% of rated voltage ideal diodes square wave: downloaded from: http:///
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" # ! -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 1.0 2.0 3.0 4.0 v c e , c o l l e c t o r - t o e m i t t e r v o l t a g e ( v ) i c = 112a v ge = 15v 80s pulse width i c = 56a i c = 28a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.0906 0.0003500.0906 0.002209 0.2003 0.028536 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci= i / ri ci= i / ri 25 50 75 100 125 150 t c , case temperature (c) 0 20 40 60 80 100 120 m a x i m u m d c c o l l e c t o r c u r r e n t ( a ) limited by package downloaded from: http:///
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! 0 50 100 150 200 v ce , collector-toemitter-voltage(v) 10 100 1000 10000 100000 c a p a c i t a n c e ( p f ) cies coes cres v gs = 0v, f = 1 mhz c ies = c ge + c gd , c ce shorted c res = c gc c oes = c ce + c gc 0 50 100 150 200 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 200v i c = 56a 0 5 10 15 20 25 30 r g , gate resistance ( ? ) 800 1000 1200 1400 1600 1800 2000 2200 2400 t o t a l s w i c h i n g l o s s e s ( j ) v ce = 200v v ge = 15v t j = 25c i c = 56a -55 -5 45 95 145 t j , juntion temperature (c) 0 1000 2000 3000 4000 5000 6000 7000 t o t a l s w i c h i n g l o s s e s ( j ) r g = 5.0? v ge = 15v i c = 112a i c = 56a i c = 28a downloaded from: http:///
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%( 20 40 60 80 100 120 i c , collecto-to-emitter (a) 0 1000 2000 3000 4000 5000 6000 t o t a l s w i c h i n g l o s s e s ( j ) r g = 5.0? t j = 150c v ce = 200v v ge = 15v 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i c , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) v ge = 20v t j = 125 safe operating area downloaded from: http:///
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d.u.t. 50v l v * c * driver same type as d.u.t.; vc = 80% of vce(max) * note: due to the 50v power supply, pulse width and inductor will increase to obtain rated id. 1000v ! 480f 960v t=5 s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% v c i c e on e off ts on off e = (e +e ) "#$% & 5 0v driver* 1000v d.u.t . i c c v l "#$%
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8 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/04
example: as s embled on ww 35, 2000 lot code 5657 wi t h as s e mb l y this is an irfpe30 in the assembly line "h" 035h logo int ernational rectifier irfpe30 lot code as s e mb l y 56 57 part number dat e code ye ar 0 = 200 0 we e k 35 line h note: "p" in assembly line position indicates "lead-free"
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note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ downloaded from: http:///

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